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參數資料
| 型號： | AP9926EO |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Power MOSFETs from APEC provide the designer with the best combination of fast switching |
| 中文描述： | 來自亞太經合組織MOSFET的功率提供了快速開關設計的最佳組合 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | AP9926EO |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface mount package
BV
DSS
R
DS(ON)
I
D
20V
28m
Ω
4.6A
▼
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
125
Unit
℃
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
20112502
AP9926EO
Parameter
Rating
20
± 12
4.6
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
3.7
20
1
0.008
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2S2
S2
G2
D1
S1
S1G1
TSSOP-8
S1
G1
D1
S2
G2
D2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP9926GEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926GEO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge,Surface mount package |
| AP9926GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
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