欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: AP9963GI-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 70 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN
文件頁數: 2/4頁
文件大小: 94K
代理商: AP9963GI-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=40A
-
4
m
VGS=4.5V, ID=30A
-
6.5
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
80
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=30A
-
25
40
nC
Qgs
Gate-Source Charge
VDS=32V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
11
-
ns
tr
Rise Time
ID=30A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=2.4Ω,VGS=10V
-
30
-
ns
tf
Fall Time
RD=0.66Ω
-9
-
ns
Ciss
Input Capacitance
VGS=0V
-
2800 4500
pF
Coss
Output Capacitance
VDS=25V
-
590
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=40A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
41
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
47
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9963GI-HF
相關PDF資料
PDF描述
AP9964GM 9 A, 40 V, 0.016 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP9972AGI 60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9972GH-HF 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9973GH-HF 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9973GJ-HF 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
相關代理商/技術參數
參數描述
AP9963GP-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9963GS-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9964GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9965GEH 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9965GEJ 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
主站蜘蛛池模板: 赤峰市| 滨海县| 卓资县| 蚌埠市| 西畴县| 抚顺县| 武川县| 卓尼县| 那曲县| 玉山县| 望奎县| 临夏市| 祁东县| 额济纳旗| 洛川县| 无锡市| 富平县| 泰来县| 阳新县| 扎兰屯市| 东兴市| 当雄县| 体育| 阜新市| 衡南县| 汉寿县| 广水市| 北碚区| 黔东| 黄骅市| 汽车| 五河县| 玉龙| 饶平县| 平江县| 阜新市| 筠连县| 舞阳县| 兴城市| 泸溪县| 汪清县|