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參數資料
型號: AP9970GK
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 5.8 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT PACKAGE-4
文件頁數: 1/4頁
文件大小: 125K
代理商: AP9970GK
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower Gate Charge
RDS(ON)
50mΩ
▼ Fast Switching Characteristic
ID
5.8A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
45
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2.8
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Continuous Drain Current
3
4.6
Pulsed Drain Current
1
30
Gate-Source Voltage
±20
Continuous Drain Current
3
5.8
Parameter
Rating
Drain-Source Voltage
60
Pb Free Plating Product
200725061-1/4
AP9970GK
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S
D
S
G
SOT-223
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AP9971GP 25 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相關代理商/技術參數
參數描述
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