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參數(shù)資料
型號: AP9973GD
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù): 1/4頁
文件大小: 60K
代理商: AP9973GD
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
60V
▼ Fast Switching Speed
RDS(ON)
80mΩ
▼ PDIP-8 Package
ID
3.9A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3, V
GS @ 10V
2.5
Pulsed Drain Current
1,2
20
Gate-Source Voltage
Continuous Drain Current
3, V
GS @ 10V
3.9
Parameter
Rating
Drain-Source Voltage
60
200713061-1/4
AP9973GD
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
±20
G2
D2
S2
G1
D1
S1
D1
D2
S1
G1
S2
G2
PDIP-8
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AP9973GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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