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參數資料
| 型號： | AP9977GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 60 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP- 8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 212K |
| 代理商： | AP9977GM |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
100mΩ
▼ Surface Mount Package
ID
3.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Thermal Data
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
RoHS-compliant Product
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current
3
2.7
Pulsed Drain Current
1
20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201108073-1/4
AP9977GM
Rating
60
±25
3.3
0.016
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
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