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參數(shù)資料
| 型號(hào)： | AP9997GK |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.2 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP9997GK |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
120m
▼ Fast Switching Characteristic
ID
3.2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
45
℃
/W
Data and specifications subject to change without notice
RoHS-compliant Product
1
AP9997GK
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current
3
3.2
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3
2.6
Pulsed Drain Current
1
20
Storage Temperature Range
Total Power Dissipation
2.8
-55 to 150
201006153
Thermal Data
Parameter
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S
D
S
G
SOT-223
The SOT-223 package is designed for suface mount
application, larger heatsink than SO-8 and SOT package.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9997GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9998GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9998GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic |
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