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參數資料
| 型號： | AP9T18GEH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 126K |
| 代理商： | AP9T18GEH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ G-S Diode embedded
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
14mΩ
▼ Surface mount package
ID
40A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃
/W
Data and specifications subject to change without notice
200523061-1/4
AP9T18GEH/J
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
±12
Continuous Drain Current, VGS @ 4.5V
40
Continuous Drain Current, VGS @ 4.5V
25
Pulsed Drain Current
1
160
Total Power Dissipation
31
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.25
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D S
TO-252(H)
S
G
D
G
D
S
TO-251(J)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP9T18GEJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:G-S Diode embedded, Capable of 2.5V gate drive |
| AP9T18GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T19GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Capable of 2.5V gate drive |
| AP9U18GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| APA | 制造商:OMRON Industrial Automation 功能描述:TERMINAL ENCLOSE SIDEMNT RESIN 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:Switch Access Snap Action Switch Terminal Cover |
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