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參數(shù)資料
| 型號： | APL1001P |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 115K |
| 代理商： | APL1001P |
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APL1001P
1000V
18.0A 0.60
W
HERMETIC PACKAGE
G
D
S
0
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL1001P
1000
18
72
±30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 μA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
1000
18
0.60
25
250
±100
2
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
UNIT
Volts
Amps
Ohms
μA
nA
Volts
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 5792 1515
FAX: (33)5 5647 9761
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
R
Q
JC
R
Q
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.24
0.06
UNIT
°C/W
P-Pack
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