欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APT1001R3BN
廠商: Advanced Power Technology Ltd.
英文描述: LJT 56C 48#20 8#16 PIN RECP
中文描述: N溝道增強型高壓功率MOSFET
文件頁數: 1/4頁
文件大小: 52K
代理商: APT1001R3BN
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
0.40
40
UNIT
°
C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
MIN
TYP
MAX
APT1001R1BN
1000
APT1001R3BN
1000
APT1001R1BN
10.5
APT1001R3BN
10
APT1001R1BN
1.10
APT1001R3BN
1.30
250
1000
±
100
2
4
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
APT
APT
1001RBN
1001R3BN
1000
1000
10.5
10
42
40
±
30
310
2.48
-55 to 150
300
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT1001R1BN 1000V 10.5A 1.10
APT1001R3BN 1000V 10.0A 1.30
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
0
TO-247
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
相關PDF資料
PDF描述
APT1001R6BN Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
APT10021JFLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10021JLL LJT 56C 48#20 8#12 SKT WALL RE
APT10025JLC Circular Connector; No. of Contacts:61; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
APT10025JVFR Circular Connector; No. of Contacts:61; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
相關代理商/技術參數
參數描述
APT1001R3HN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-258ISO
APT1001R6BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET
APT1001R6BFLLG 功能描述:MOSFET N-CH 1000V 8A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT1001R6BN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1001R6SFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET
主站蜘蛛池模板: 福清市| 满洲里市| 洪雅县| 云浮市| 河曲县| 普定县| 荃湾区| 廊坊市| 云霄县| 英吉沙县| 贵南县| 肇东市| 喀喇| 顺平县| 新田县| 诸城市| 阿拉尔市| 广东省| 汉川市| 公主岭市| 泰和县| 建昌县| 西宁市| 桃江县| 沛县| 汝城县| 新河县| 平陆县| 伊川县| 株洲县| 玛多县| 华坪县| 吴堡县| 洛浦县| 大丰市| 印江| 神池县| 保德县| 广饶县| 榆林市| 务川|