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參數(shù)資料
| 型號(hào)： | APT1001R6SFLL |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 153K |
| 代理商： | APT1001R6SFLL |
050-7126
Rev
A
4-2004
APT1001R6BFLL_SFLL
Typical Performance Curves
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
G
D
S
APT Website - http://www.advancedpower.com
TO-247
D3PAK
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D3PAK Package
FAST RECOVERY BODY DIODE
POWER MOS 7 R FREDFET
APT1001R6BFLL
APT1001R6SFLL
1000V 8A 1.60
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 4A)
Zero Gate Voltage Drain Current (V
DS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1000
1.600
250
1000
±100
35
APT1001R6BFLL_SFLL
1000
8
32
±30
±40
266
2.13
-55 to 150
300
4
16
425
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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PDF描述 |
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| APT1001R6SFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R6BFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001R6BN-BUTT | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901R6BN-GULLWING | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901R6BN-BUTT | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1001R6SFLLG | 功能描述:MOSFET N-CH 1000V 8A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT1001RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 |
| APT1001RBLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT1001RBN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1001RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD |
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