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參數資料
| 型號： | APT10M11JVRU2 |
| 元件分類： | JFETs |
| 英文描述： | 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 730K |
| 代理商： | APT10M11JVRU2 |
APT10M11JVRU2
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2004
APT website – http://www.advancedpower.com
1 – 7
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
142
ID
Continuous Drain Current
Tc = 80°C
106
IDM
Pulsed Drain current
576
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
11
m
PD
Maximum Power Dissipation
Tc = 25°C
450
W
IAR
Avalanche current (repetitive and non repetitive)
144
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 90°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
47
A
VDSS = 100V
RDSon = 11m max @ Tj = 25°C
ID = 142A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP Boost chopper
MOSFET Power Module
K
D
G
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT10M11JVRU3 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT10M11LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:High Voltage N-Channel enhancement mode power MOSFET |
| APT10M11LVFRG | 功能描述:MOSFET N-CH 100V 100A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT10M11LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| APT10M13JNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 150A I(D) |
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