- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36703 > APT1101R2SFLL 10 A, 1100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT1101R2SFLL |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 1100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 105K |
| 代理商： | APT1101R2SFLL |
050-7185
Rev
A
2-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D3PAK Package
FAST RECOVERY BODY DIODE
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance 2
(V
GS
= 10V, 5A)
Zero Gate Voltage Drain Current (V
DS
= 1100V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 880V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1100
1.20
250
1000
±100
35
APT1101R2BFLL_SFLL
1100
10
40
±30
±40
298
2.38
-55 to 150
300
10
30
1210
TO-247
D3PAK
APT1101R2BFLL
APT1101R2SFLL
1100V 10A 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1101RBFLLG | 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1101RSFLLG | 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1101RBFLL | 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1101RBFLL | 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1101RSFLL | 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1101RBFLL | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1.1KV 13A 3-Pin(3+Tab) TO-247 |
| APT1101RSFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11026JFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11044B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11044JFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。