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參數資料
| 型號： | APT11N80GC3 |
| 元件分類： | JFETs |
| 英文描述： | 7.4 A, 800 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | TO-257AA, 3 PIN |
| 文件頁數： | 2/2頁 |
| 文件大小： | 91K |
| 代理商： | APT11N80GC3 |
DYNAMIC CHARACTERISTICS
APT11N80GC3
050-7149
Rev
A
4-2004
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
1.62
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 0 to10V
V
DD = 400V
I
D = 11A @ 25°C
V
GS = 10V
V
DD = 400 V
I
D = 11A
R
G = 7.5
MIN
TYP
MAX
1585
770
18
60
8
30
25
15
70
80
710
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
7.4
22.2
1
1.2
550
10
6
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -7.4A)
Reverse Recovery Time (I
S = -7.4A, dlS/dt = 100A/s) VR = 640V
Reverse Recovery Charge (I
S = -7.4A, dlS/dt = 100A/s) VR = 640V
Peak Diode Recovery dv/dt 5
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 194mH, RG = 25, Peak IL = 2.2A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID 11A
di/dt ≤ 700A/s V
R ≤ VDSS
T
J ≤ 150°C
6 Repetitve avalanche causes additional power losses that can be
calculated as P
AV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-257AA Package Outline
10.67 (.420)
10.41 (.410)
5.33 (.210)
5.20 (.205)
19.05 (.750)
12.07 (.500)
10.92 (.430)
10.41 (.410)
.889 (.035) Dia. 3-Plcs.
.635 (.025)
2.54 (.100) BSC
5.08 (.200)
4.83 (.190)
3.05 (.120) BSC
1.14 (.045)
0.89 (.035)
3.81 (.150) Dia.
3.56 (.140)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
16.89 (.665)
16.38 (.645)
13.64 (.537)
13.38 (.527)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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相關代理商/技術參數 |
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| APT11N80KC3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT11N80KC3G | 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1201R2BFLL | 制造商:Microsemi Corporation 功能描述: |
| APT1201R2BFLLG | 功能描述:MOSFET N-CH 1200V 12A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1201R2BLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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