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參數資料
| 型號： | APT12031JFLL |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 1200 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 93K |
| 代理商： | APT12031JFLL |
050-7081
Rev
B
5-2003
APT12031JFLL
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1200
0
10
20
30
40
50
0
100
200
300
400
500
0.3
0.5
0.7
0.9
1.1
1.3
1.5
121
10
1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
TJ=+150°C
TJ =+25°C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
10
20
30
40
50
10
20
30
40
50
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
80
70
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
V
DD
= 800V
I
D
= 30A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
VDS=600V
VDS=120V
VDS=960V
I
D
= 30A
td(on)
td(off)
Eon
Eoff
400
350
300
250
200
150
100
50
0
5000
4500
3000
2000
1000
0
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
30,000
10,000
1,000
100
300
100
10
1
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相關代理商/技術參數 |
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|---|---|
| APT12031JLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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