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參數資料
| 型號： | APT12045L2VFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 1200 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264MAX, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 129K |
| 代理商： | APT12045L2VFR |
DYNAMIC CHARACTERISTICS
APT12045L2VFR
050-5844
Rev
A
4-2004
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 8.16mH, RG = 25, Peak IL = 28A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ≤ ID [Cont.], di/dt = 100A/s, Tj ≤ 150°C, RG = 2.0 VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 28A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 28A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID 28A, di/dt = 100A/s)
Peak Recovery Current
(IS = -ID 28A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 600V
ID = 28A @ 25°C
VGS = 15V
VDD = 600V
ID = 28A @ 25°C
RG = 0.6
UNIT
pF
nC
ns
MIN
TYP
MAX
28
112
1.3
18
Tj = 25°C
310
Tj = 125°C
625
Tj = 25°C
2
Tj = 125°C
6
Tj = 25°C
14
Tj = 125°C
24
THERMALCHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.15
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
11370
950
495
605
42
310
16
15
85
14
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相關代理商/技術參數 |
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|---|---|
| APT12045L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT12045L2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1204R7BFLL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 FREDFET |
| APT1204R7BFLLG | 功能描述:MOSFET N-CH 1200V 3.5A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1204R7BLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs |
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