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參數資料
型號: APT12GT60KR
廠商: Advanced Power Technology Ltd.
英文描述: The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述: ⑩的迅雷是IGBT的高壓電源IGBT的新一代。
文件頁數: 1/2頁
文件大小: 24K
代理商: APT12GT60KR
G
C
E
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
PRELMNARY
MIN
TYP
MAX
600
-15
3
4
5
1.6
2.0
2.5
2.8
40
1000
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.4mA, T
j
= -55
°
C)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 350
μ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150
°
C)
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
μ
A
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 115
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 115
°
C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT12GT60BR
600
600
15
±
20
25
12
50
24
18
125
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°
C
0
APT12GT60BR
600V
25A
The Thunderbolt IGBT
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
High Freq. Switching to 150KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
TO-247
GCE
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
相關PDF資料
PDF描述
APT20GF120BR The Fast IGBT is a new generation of high voltage power IGBTs.
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APT20GF120KR The Fast IGBT is a new generation of high voltage power IGBTs.
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