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參數資料
| 型號： | APT13GP120SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | ROHS COMPLIANT, TO-268, D3PAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 407K |
| 代理商： | APT13GP120SG |
050-7412
Rev
E
1-2006
APT13GP120B_S(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 500A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J,TSTG
T
L
APT13GP120B_S(G)
1200
±30
41
20
50
50A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Reverse Bias Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
500
3000
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 600V, 10A
Low Gate Charge
50 kHz operation @ 600V, 16A
Ultrafast Tail Current shutoff
RBSOA Rated
POWER MOS 7 IGBT
1200V
APT13GP120B
APT13GP120S
APT13GP120BG*
APT13GP120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
G
C
E
TO-2
47
G
C
E
D3PAK
G
C
E
B
S
相關PDF資料 |
PDF描述 |
|---|---|
| APT13GP120BG | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT13GP120BG | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT13GP120S | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| APT13GP120S | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| APT13GP120SG | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT14050JVFR | 功能描述:MOSFET N-CH 1400V 23A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT14F100B | 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT14F100B_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel FREDFET |
| APT14F100S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1000V 14A D3PAK |
| APT14M100B | 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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