欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APT14050JVFR
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數: 1/4頁
文件大小: 135K
代理商: APT14050JVFR
050-7259
Rev
A
4-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT14050JVFR
1400V 23A 0.500
SOT-227
G
S
D
ISOTOP
"UL Recognized"
FREDFET
APT Website - http://www.advancedpower.com
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode
Avalanche Energy Rated
Lower Leakage
Popular SOT-227 Package
Faster Switching
POWER MOS V
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 11.5A)
Zero Gate Voltage Drain Current (V
DS = 1400V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 1120V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1400
0.500
250
1000
±100
24
APT14050JVFR
1400
23
92
±30
±40
694
5.56
-55 to 150
300
23
50
3600
相關PDF資料
PDF描述
APT150GN60B2 220 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT15GP90BDF1 43 A, 900 V, N-CHANNEL IGBT, TO-247AD
APT15GT120BRDQ1 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD
APT15GT60BRDQ1 42 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT15GT60KR 42 A, 600 V, N-CHANNEL IGBT, TO-220AB
相關代理商/技術參數
參數描述
APT14F100B 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT14F100B_09 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel FREDFET
APT14F100S 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1000V 14A D3PAK
APT14M100B 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT14M100B_09 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET
主站蜘蛛池模板: 卫辉市| 科技| 团风县| 资讯 | 西吉县| 大新县| 苍溪县| 理塘县| 石阡县| 扶风县| 深水埗区| 泰和县| 大港区| 西充县| 上饶县| 高碑店市| 察隅县| 明溪县| 鸡西市| 崇左市| 奉化市| 合江县| 清涧县| 东源县| 大方县| 綦江县| 乌鲁木齐县| 屏东市| 平陆县| 和龙市| 五莲县| 金溪县| 郑州市| 苍山县| 大庆市| 石河子市| 尼玛县| 宁强县| 巩义市| 常熟市| 论坛|