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參數(shù)資料
| 型號(hào)： | APT150GN60J |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 220 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 482K |
| 代理商： | APT150GN60J |
050-7624
Rev
A
11-2005
APT150GN60J
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specications and information contained herein.
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 300V
I
C = 150A
T
J = 175°C, RG = 4.3
7
, V
GE =
15V, L = 100H,V
CE = 600V
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 150A
R
G = 1.0
7
T
J = +25°C
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 150A
R
G = 1.0
7
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN
TYP
MAX
9200
350
300
9.5
970
65
510
450
44
110
430
60
8810
8615
4295
44
110
480
95
8880
9735
5460
UNIT
pF
V
nC
A
ns
J
ns
J
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
Volts
oz
gm
Ibin
Nm
MIN
TYP
MAX
0.28
N/A
2500
1.03
29.2
10
1.1
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Terminal & Mounting Torque
Symbol
RθJC
V
Isolation
W
T
Torque
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