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參數資料
| 型號： | APT15GT60KR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的迅雷是IGBT的高壓電源IGBT的新一代。 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | APT15GT60KR |
G
C
E
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
PRELMNARY
MIN
TYP
MAX
600
-15
3
4
5
1.6
2.0
2.5
2.8
40
1000
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55
°
C)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 400
μ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150
°
C)
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
μ
A
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 110
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 110
°
C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT15GT60BR
600
600
15
±
20
31
15
60
30
24
135
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°
C
0
APT15GT60BR
600V
31A
The Thunderbolt IGBT
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
High Freq. Switching to 150KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
TO-247
GCE
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT15GT60KRG | 功能描述:IGBT 600V 42A 184W TO220 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT15S20BCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20BCTG | 功能描述:DIODE SCHOTTKY 2X25A 200V TO-247 RoHS:是 類別:分離式半導體產品 >> 二極管，整流器 - 陣列 系列:- 其它有關文件:STTH10LCD06C View All Specifications 標準包裝:1,000 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:2V @ 5A 電流 - 在 Vr 時反向漏電:1µA @ 600V 電流 - 平均整流 (Io)（每個二極管）:5A 電壓 - (Vr)（最大）:600V 反向恢復時間(trr):50ns 二極管類型:標準 速度:快速恢復 = 200mA（Io） 二極管配置:1 對共陰極 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D²Pak（2 引線+接片），TO-263AB 供應商設備封裝:D2PAK 包裝:帶卷 (TR) 產品目錄頁面:1553 (CN2011-ZH PDF) 其它名稱:497-10107-2 |
| APT15S20K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20KCT | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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