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參數資料
| 型號： | APT17N80SC3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數： | 5/5頁 |
| 文件大小： | 176K |
| 代理商： | APT17N80SC3 |
APT17N80BC3_SC3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7142
Rev
D
4-2004
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
T
J
= 125 C
90%
t
d(off)
10%
tf
0
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
TJ = 125 C
10 %
90%
t
d(on)
t
r
10 %
5 %
Drain Voltage
Gate Voltage
Drain Current
Switching Energy
IC
D.U.T.
APT15DF100
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
相關PDF資料 |
PDF描述 |
|---|---|
| APT17N80SC3 | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT17N80SC3G | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT17N80BC3G | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT17N80BC3 | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT17N80BC3 | 17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT17N80SC3G | 功能描述:MOSFET N-CH 800V 17A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT17NTR-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT17Z-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT17ZTR-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT18F60B | 功能描述:MOSFET N-CH 600V 18A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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