- 您現在的位置：買賣IC網 > PDF目錄36707 > APT20GF120SRD 32 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數資料
| 型號： | APT20GF120SRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 108K |
| 代理商： | APT20GF120SRD |
D3PAK
G
C
E
MIN
TYP
MAX
4.5
5.5
6.5
2.7
3.2
3.3
3.9
1
6
±100
Characteristic / Test Conditions
Gate Threshold Voltage
(VCE = VGE, IC = 600A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
UNIT
Volts
mA
nA
Symbol
VGE(TH)
VCE(ON)
ICES
IGES
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate-Emitter Voltage
Continuous Collector Current 3
@ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
@ TC = 90°C
RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
APT20GF120BRD
APT20GF120SRD
1200V
32A
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness
and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT & FRED
MAXIMUM RATINGS (IGBT)
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6252
Rev
C
4-2003
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
PD
TJ,TSTG
TL
APT20GF120BRD/SRD
1200
±20
32
20
64
40
200
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
相關PDF資料 |
PDF描述 |
|---|---|
| APT20GF120SRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT20GF120SRDQ1 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT20GF120SRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GN60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GN60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT20GN60BDQ1G | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。