- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄36707 > APT20GS60BRDQ1 (MICROSEMI POWER PRODUCTS GROUP) 37 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT20GS60BRDQ1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 630K |
| 代理商： | APT20GS60BRDQ1 |
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Single die
IGBT with
separate DQ
diode die
Symbol Parameter
Min
Typ
Max
Unit
PD
Total Power Dissipation TC = @ 25°C
-
180
W
RθJC
Junction to Case Thermal Resistance
IGBT
-
0.70
°C/W
Diode
1.35
RθCS
Case to Sink Thermal Resistance, Flat Greased Surface
-
0.11
-
TJ, TSTG Operating and Storage Junction Temperature Range
-55
-
150
°C
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
-
300
WT
Package Weight
-
0.22
-
oz
-
5.9
-
g
Torque
Mounting Torque (TO-247), 6-32 M3 Screw
-
10
inlbf
-
1.1
Nm
Symbol Parameter
Rating
Unit
I
C1
Continuous Collector Current TC = @ 25°C
37
A
I
C1
Continuous Collector Current TC = @ 100°C
20
I
CM
Pulsed Collector Current 1
80
V
GE
Gate-Emitter Voltage
±30V
V
SSOA
Switching Safe Operating Area
80
E
AS
Single Pulse Avalanche Energy 2
115
mJ
t
SC
Short Circut Withstand Time 3
10
s
I
F
Diode Continuous Forward Current
TC = 25°C
43
A
TC = 100°C
26
I
FRM
Diode Max. Repetitive Forward Current
80
Typical Applications
ZVS Phase Shifted and other Full Bridge
Half Bridge
High Power PFC Boost
Welding
Induction heating
High Frequency SMPS
Features
Fast Switching with low EMI
Very Low EOFF for Maximum Efciency
Short circuit rated
Low Gate Charge
Tight parameter distribution
Easy paralleling
RoHS Compliant
The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt series, but trades higher VCE(ON) for signicantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefcient
make it easy to parallel Thunderbolts HS IGBT's. Controlled slew rates result in very good noise
and oscillation immunity and low EMI. The short circuit duration rating of 10s make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
TO-247
D3PAK
APT20GS60BRDQ1(G)
APT20GS60SRDQ1(G)
600V, 20A, VCE(ON) = 2.8V Typical
APT20GS60BRDQ1(G)
APT20GS60SRDQ1(G)
Microsemi Website - http://www.microsemi.com
052-6304
Rev
A
8-2007
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GS60KR(G) | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GT60AR | 30 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| APT20GT60CR | 25 A, 600 V, N-CHANNEL IGBT, TO-254AA |
| APT20M11JVFR | 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
| APT20GS60SRDQ1 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60SRDQ1G | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。