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參數資料
| 型號： | APT20M13PVR |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 200 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, PPACK-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 53K |
| 代理商： | APT20M13PVR |
G
D
S
050-5834
Rev
A
12-2003
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT20M13PVR
200V
120A
0.013
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
Avalanche Energy Rated
Lower Leakage
Hermetic "P" Package
POWER MOS V
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance 2 (V
GS
= 10V, 60A)
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
5
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
200
0.013
100
500
±100
24
APT20M13PVR
200
120
480
±30
±40
625
5.0
-55 to 150
300
120
30
3600
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相關代理商/技術參數 |
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