欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: APT20M16LFLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 166K
代理商: APT20M16LFLL
050-7044
Rev
C
5-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAX
G
D
S
TO-264
B2FLL
LFLL
APT20M16B2FLL
APT20M16LFLL
200V 100A 0.016
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
FAST RECOVERY BODY DIODE
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 50A)
Zero Gate Voltage Drain Current (V
DS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current 7 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
200
0.016
250
1000
±100
35
APT20M16B2FLL_LFLL
200
100
400
±30
±40
694
5.56
-55 to 150
300
100
50
3000
相關(guān)PDF資料
PDF描述
APT20M16B2FLLG 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M16B2FLL 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M16LFLL 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT20M18B2VFR 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
A20M18LVFR 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M16LFLLG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube
APT20M16LLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT20M16LLLG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APT20M18B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT20M18B2VFR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
主站蜘蛛池模板: 桃源县| 阜平县| 常山县| 麻栗坡县| 莒南县| 芮城县| 武功县| 施秉县| 荔波县| 嵊州市| 澳门| 西乌珠穆沁旗| 兰考县| 溧阳市| 英吉沙县| 汨罗市| 广灵县| 河源市| 临沧市| 沭阳县| 九龙坡区| 甘泉县| 长阳| 台东市| SHOW| 五原县| 定陶县| 清新县| 张家界市| 桐梓县| 加查县| 观塘区| 陈巴尔虎旗| 万宁市| 内乡县| 嘉兴市| 连南| 桐柏县| 万全县| 麦盖提县| 茶陵县|