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參數(shù)資料
| 型號： | APT20M36SFLL |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 169K |
| 代理商： | APT20M36SFLL |
DYNAMIC CHARACTERISTICS
APT20M36BFLL_ SFLL
050-7048
Rev
C
7-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -65A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -65A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -65A, di/dt = 100A/s)
Peak Recovery Current
(IS = -65A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
65
260
1.3
8
Tj = 25°C
200
Tj = 125°C
300
Tj = 25°C
0.7
Tj = 125°C
2.4
Tj = 25°C
10
Tj = 125°C
18
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 100V
I
D = 65A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 100V
I
D = 65A @ 25°C
R
G = 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 133V, VGS = 15V
I
D = 65A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 133V VGS = 15V
I
D = 65A, RG = 5
MIN
TYP
MAX
3080
990
70
60
24
26
9
37
16
30
490
300
600
315
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.62mH, RG = 25, Peak IL = 65A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID65A
di/dt ≤ 700A/s V
R ≤ 200V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
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| APT20M38BVFR_06 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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