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參數(shù)資料
| 型號(hào)： | APT20M36SLL |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 中文描述： | 電源MOS 7TM是一個(gè)低損耗，高電壓，N溝道增強(qiáng)型功率MOSFET的新一代。 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 63K |
| 代理商： | APT20M36SLL |
Single Pulse Avalanche Energy
4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
200
65
0.036
250
1000
±100
5
3
APT20M36
200
65
260
±30
±40
325
2.6
-55 to 150
300
65
30
1300
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 5792 1515
FAX: (33)5 5647 9761
D
3
PAK
BFLL
SFLL
APT20M36BFLL
APT20M36SFLL
200V 65A 0.036
W
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
and Q
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D
3
PAK Package
FAST RECOVERY BODY DIODE
POWER MOS 7
TM
FREDFET
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