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參數資料
| 型號： | APT20N60SC3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 200K |
| 代理商： | APT20N60SC3G |
TO-247
050-7145
Rev
D
4-2006
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
Ultra low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
TO-247 or Surface Mount D3PAK Package
APT20N60BC3
APT20N60SC3
600V 20.7A 0.190
D3PAK
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 13.1A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS = 480V, ID = 20.7A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
600
0.16
0.19
0.05
25
250
±100
2.1
3
3.9
APT20N60BC3_SC3
600
20.7
62
±20
±30
208
1.67
-55 to 150
260
50
20
1
690
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