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參數(shù)資料
| 型號(hào)： | APT25GN120BG |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMLPLIANT, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 195K |
| 代理商： | APT25GN120BG |
050-7600
Rev
D
11-2005
APT25GN120B_S(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 150A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Integrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT25GN120B(G)
1200
±30
67
33
75
75A @ 1200V
272
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
1200
5
5.8
6.5
1.4
1.7
2.1
1.9
100
TBD
600
8
G
C
E
1200V
APT25GN120B
APT25GN120S
APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefcient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplies gate drive design and minimizes losses.
1200V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
Integrated Gate Resistor: Low EMI, High Reliability
TO-2
47
G
C
E
D3PAK
G
C
E
(S)
(B)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120SG | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT25GN120S | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Utilizing the latest Field Stop and Trench Gate technologies |
| APT25GN120SG | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 67A 272W D3PAK 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
| APT25GP120B | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BD1 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BDQ1 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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