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參數資料
| 型號： | APT26M100JCU3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 109K |
| 代理商： | APT26M100JCU3 |
APT26M100JCU3
APT
26M
100JCU3
–
Rev
0
September
,2009
www.microsemi.com
1- 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
A
S
G
D
ISOTOP
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
26
ID
Continuous Drain Current
Tc = 80°C
20
IDM
Pulsed Drain current
140
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
396
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
543
W
IAR
Avalanche current (repetitive and non repetitive)
18
A
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 8 MOSFET
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Buck chopper
MOSFET + SiC chopper diode
Power module
VDSS = 1000V
RDSon = 330mΩ typ @ Tj = 25°C
ID = 26A @ Tc = 25°C
A
D
G
S
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