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參數(shù)資料
| 型號： | APT30GN60B |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 395K |
| 代理商： | APT30GN60B |
050-7616
Rev
A
7-2005
APT30GN60B(G)
TYPICAL PERFORMANCE CURVES
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1.30
1.20
1.10
1.00
0
1
2
3
4
5
0
2
4
6
8
10
12
0
3
6
9
12
15
0 20 40 60 80 100 120 140 160 180 200
8
9
10
11
12
13
14
15
16
0
25
50
75
100
125
150 175
-50 -25
0
25 50 75 100 125 150 175
-50 -25
0
25 50 75 100 125 150 175
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
90
80
70
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
12V
11V
10V
13V
9V
8V
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 60A
I
C = 30A
I
C = 15A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 60A
I
C = 30A
I
C = 15A
T
J = 175°C
T
J = 25°C
T
J = -55°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
VGE = 15V
T
J = 125°C
7V
T
J = 175°C
V
CE = 480V
V
CE = 300V
V
CE = 120V
IC = 30A
TJ = 25°C
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| APT30GN60BDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT30GN60BDQ2G | 功能描述:IGBT 600V 63A 203W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT30GN60BG | 功能描述:IGBT 600V 63A 203W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT30GN60K | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GN60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube |
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