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參數資料
| 型號： | APT30GN60BDQ2G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 429K |
| 代理商： | APT30GN60BDQ2G |
050-7617
Rev
A
7-2005
APT30GN60BDQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 2mA)
Gate Threshold Voltage (V
CE = VGE, I C = 430A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT30GN60BDQ2(G)
600
±30
63
37
75
75A @ 600V
203
-55 to 175
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefcient. Low gate charge simplies gate drive
design and minimizes losses.
600V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
10s Short Circuit Capability
175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.1
1.5
1.9
1.7
50
TBD
300
N/A
600V
APT30GN60BDQ2
APT30GN60BDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-2
47
G
C
E
C
E
G
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30GN60BG | 功能描述:IGBT 600V 63A 203W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT30GN60K | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GN60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube |
| APT30GN60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GN60SDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
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