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參數資料
| 型號： | APT30GP60JDQ1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 456K |
| 代理商： | APT30GP60JDQ1 |
050-7452
Rev
A
9-2005
APT30GP60JDQ1
TYPICAL PERFORMANCE CURVES
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
10,000
1,000
500
100
50
10
1
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100 200
300
400
500 600
700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
0
10
20
30
40
50
60
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5
300
100
50
10
1
C
ies
C
0es
C
res
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.135
0.217
0.158
0.00659F
0.0999F
0.575F
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
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