欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APT30GT60AR
元件分類: IGBT 晶體管
英文描述: 40 A, 600 V, N-CHANNEL IGBT, TO-204AE
封裝: HERMETIC SEALED, TO-3, 2 PIN
文件頁數: 1/2頁
文件大小: 27K
代理商: APT30GT60AR
PRELIMINARY
G
C
E
MIN
TYP
MAX
600
-15
345
1.6
2.0
2.5
2.8
40
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA, Tj = -55°C)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
RBVCES
VGE(TH)
VCE(ON)
ICES
IGES
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VEC
VGE
I C1
I C2
I CM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT30GT60AR
600
15
±20
40
30
80
60
65
160
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
APT30GT60AR
600V
40A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Hermetic Package
Thunderbolt IGBT
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5971
Rev
-
5-2000
TO-3
(TO-204AE)
相關PDF資料
PDF描述
APT30GT60KR 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT30GU60JU3 67 A, 600 V, N-CHANNEL IGBT
APT30M17JFLL 135 A, 300 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M19JVFR 130 A, 300 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M19JVR 130 A, 300 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
APT30GT60BR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
APT30GT60BR_08 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
APT30GT60BRD 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
APT30GT60BRDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GT60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
主站蜘蛛池模板: 深圳市| 佛坪县| 绥中县| 建平县| 大宁县| 宜丰县| 商洛市| 昆明市| 醴陵市| 揭阳市| 京山县| 星子县| 台安县| 盐源县| 万源市| 凤城市| 大荔县| 焦作市| 汽车| 聊城市| 平泉县| 日喀则市| 将乐县| 福海县| 咸宁市| 台北市| 抚州市| 漳平市| 成都市| 宝鸡市| 务川| 沙湾县| 秦皇岛市| 凤凰县| 车险| 仲巴县| 香格里拉县| 鞍山市| 河曲县| 屏东县| 射洪县|