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參數資料
| 型號： | APT30GT60CR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 30 A, 600 V, N-CHANNEL IGBT, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 28K |
| 代理商： | APT30GT60CR |
APT30GT60CR
600V
30A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Hermetic Package
Thunderbolt IGBT
050-5972
Rev
-
6-2000
TO-254
G
C
E
G
C
E
PRELIMINARY
MIN
TYP
MAX
600
-15
345
1.6
2.0
2.5
2.8
40
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA, Tj = -55°C)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
RBVCES
VGE(TH)
VCE(ON)
ICES
IGES
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VEC
VGE
I C1
I C2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current
@ TC = 25°C
Continuous Collector Current @ TC = 60°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT30GT60CR
600
15
±20
30
110
60
65
100
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30GT60KR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60KRG | 功能描述:IGBT 600V 64A 250W TO220 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT30M17JFLL | 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT30M17JLL | 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT30M17JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
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