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參數(shù)資料
| 型號(hào)： | APT30M17JLL |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | GIGATRUE 550 CAT PATCH CABLE NO BOOT 3FT BEIGE |
| 中文描述： | 電源MOS 7TM是一個(gè)低損耗，高電壓，N溝道增強(qiáng)型功率MOSFET的新一代。 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | APT30M17JLL |
Single Pulse Avalanche Energy
4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
300
135
0.017
100
500
±100
5
3
APT30M17JLL
300
135
540
±30
±40
690
5.52
-55 to 150
300
135
50
3600
APT30M17JLL
300V 135A 0.017
W
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 5792 1515
FAX: (33)5 56 4797 61
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
POWER MOS 7
TM
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
and Q
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Lower Miller Capacitance
Lower Gate Charge, Qg
Increased Power Dissipation
Easier To Drive
Popular SOT-227 Package
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| APT30M17JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
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