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參數資料
型號: APT30M36LFLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數: 1/5頁
文件大小: 171K
代理商: APT30M36LFLLG
050-7161
Rev
B
7-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
T-MAX
G
D
S
TO-264
APT30M36B2FLL
APT30M36LFLL
300V
84A 0.036
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
FREDFET
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 42A)
Zero Gate Voltage Drain Current (V
DS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
300
0.036
250
1000
±100
35
APT30M36B2FLL_LFLL
300
84
336
±30
±40
568
4.55
-55 to 150
300
84
50
2500
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
B2FLL
LFLL
相關PDF資料
PDF描述
APT30M36B2FLLG 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M36B2FLL 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M36LFLL 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT30M36LFLL 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT30M61BFLL 54 A, 300 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關代理商/技術參數
參數描述
APT30M36LLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT30M36LLLG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube
APT30M40B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT30M40B2VFRG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube
APT30M40B2VR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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