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參數資料
| 型號： | APT30M61SLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 103K |
| 代理商： | APT30M61SLL |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100
300
0
10
20
30
40
50
0
10
20
30
40
50 60
70 80
90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
216
100
10
1
16
14
12
10
8
6
4
2
0
10,000
5,000
1,000
100
10
200
100
50
10
5
1
TJ =+150°C
TJ =+25°C
Coss
Ciss
Crss
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 200V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 200V
I
D
= 54A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
V
DD
= 200V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 200V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
90
80
70
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
VDS = 150V
VDS = 60V
VDS = 240V
I
D
= 54
APT30M61BLL - SLL
Typical Performance Curves
050-7156
Rev
A
1-2004
相關PDF資料 |
PDF描述 |
|---|---|
| APT30M61BLL | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT30M61BLLG | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT30M61SLLG | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M61BLL | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT30M61SLL | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30M61SLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube |
| APT30M70BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M70BVFRG | 功能描述:MOSFET N-CH 300V 48A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT30M70BVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M70BVRG | 功能描述:MOSFET N-CH 300V 48A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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