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參數資料
| 型號： | APT30M61SLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 103K |
| 代理商： | APT30M61SLLG |
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
15V
6V
7V
8V
9V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
NORMALIZED TO
V
GS
= 10V @ 27A
0.119
0.191
0.0135F
0.319F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)
10V
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
I
D
= 27A
V
GS
= 10V
160
140
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
Typical Performance Curves
APT30M61BLL - SLL
050-7156
Rev
A
1-2004
180
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
相關PDF資料 |
PDF描述 |
|---|---|
| APT30M61BLL | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT30M61SLL | 54 A, 300 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT3520BN | 26 A, 350 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT3525BN | 23 A, 350 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT35GP120B | 96 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30M70BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M70BVFRG | 功能描述:MOSFET N-CH 300V 48A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT30M70BVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M70BVRG | 功能描述:MOSFET N-CH 300V 48A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT30M70SVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
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