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參數(shù)資料
| 型號： | APT30N60SC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 151K |
| 代理商： | APT30N60SC6 |
050-7209
Rev
A
8-2010
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
G
D
S
Microsemi Website - http://www.microsemi.com
APT30N60BC6
APT30N60SC6
600V
30A
.125
Ω
Symbol
Parameter
APT30N60B_SC6
UNIT
V
DSS
Drain-Source Voltage
600
Volts
I
D
Continuous Drain Current @ T
C = 25°C
30
Amps
Continuous Drain Current @ T
C = 100°C
19
I
DM
Pulsed Drain Current 1
89
V
GS
Total Power Dissipation @ T
C = 25°C
±
20
Volts
P
D
Gate-Source Voltage Continuous
219
Watts
T
J,TSTG
Operating and Storage Junction Temperature Range
- 55 to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
260
dv/dt
Drain-Source Voltage slope (VDS = 480V, ID = 30A, TJ = 125°C)
15
V/ns
I
AR
Avalanche Current 2
5.2
Amps
E
AR
Repetitive Avalanche Energy 2 ( Id = 5.2A, Vdd = 50V )
0.96
mJ
E
AS
Single Pulse Avalanche Energy
( Id = 5.2A, Vdd = 50V )
636
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BV
(DSS)
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250μA)
600
Volts
R
DS(on)
Drain-Source On-State Resistance 3 (V
GS = 10V, ID = 14.5A)
0.11
0.125
Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
25
μA
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
100
I
GSS
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS = VGS, ID = 960μA)
2.5
3
3.5
Volts
TO-247
D3PAK
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