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參數資料
| 型號： | APT35GP120B |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 96 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 259K |
| 代理商： | APT35GP120B |
050-7406
Rev
E
12-2006
APT35GP120B
APT35GP120BG
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 800V, 14A
Low Gate Charge
50 kHz operation @ 800V, 25A
Ultrafast Tail Current shutoff
RBSOA rated
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
RBSOA
PD
TJ,TSTG
TL
APT35GP120B(G)
1200
±20
±30
96
46
140
140A @ 960V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
@ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7 IGBT
Microsemi Website - http://www.microsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT35GP120B2D2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps|Ultrafast IGBT Family |
| APT35GP120B2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT35GP120B2DQ2G | 功能描述:IGBT 1200V 96A 543W TMAX RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT35GP120BG | 功能描述:IGBT 1200V 96A 543W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT35GP120J | 功能描述:IGBT 1200V 64A 284W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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