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參數(shù)資料
| 型號： | APT40GP60B2DQ2G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, T-MAX, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 529K |
| 代理商： | APT40GP60B2DQ2G |
050-7493
Rev
A
5-2005
APT40GP60B2DQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 250A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT40GP60B2DQ2(G)
600
±20
100
62
160
160A @ 600V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
500
3000
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 400V, 41A
Low Gate Charge
200 kHz operation @ 400V, 26A
Ultrafast Tail Current shutoff
SSOA Rated
POWER MOS 7 IGBT
600V
APT40GP60B2DQ2
APT40GP60B2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
T-MaxTM
G
C
E
C
E
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT40GP60BG | 功能描述:IGBT 600V 100A 543W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT40GP60J | 功能描述:IGBT 600V 86A 284W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT40GP60JD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):40Amps|Ultrafast IGBT Family |
| APT40GP60JDQ2 | 功能描述:IGBT 600V 86A 284W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT40GP60S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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