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參數資料
| 型號： | APT40GP60J |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 86 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 99K |
| 代理商： | APT40GP60J |
050-7410
Rev
C
4-2003
APT40GP60J
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
VCE = 400V
RG = 5
L = 100 H
V
GE =
15V,TJ=125°C
VGE= 15V
VGE= 10V
V
GE
=10V,TJ=125°C
V
GE =
10V,TJ=25°C
V
GE =
15V,TJ=25°C
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=5
, L = 100H, V
CE = 400V
R
G
=5
, L = 100H, V
CE = 400V
SWITCHING
ENERGY
LOSSES
(J)
E
ON1
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
0
20
40
60
80
100
0
20
40
60
80
100
0
20
406080
100
0
2040
60
80
100
0
20
40
60
80
100
0
20
40
60
80
100
0
10
20
30
40
50
0
25
50
75
100
125
40
35
30
25
20
15
10
5
0
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
100
80
60
40
20
0
100
80
60
40
20
0
2000
1500
1000
500
0
3000
2500
2000
1500
1000
500
0
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
TJ=125°C, 15V
TJ = 25°C, 15V
TJ=125°C,10V
TJ = 25°C, 10V
Eon220A
Eoff40A
Eon240A
Eon280A
Eoff80A
Eoff20A
Eon220A
Eoff40A
Eon240A
Eon280A
Eoff80A
Eoff20A
T
J
= 25 or 125°C,VGE = 15V
T
J
= 25 or 125°C,VGE = 10V
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
VCE = 400V
TJ = 125°C
VGE = +15V
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相關代理商/技術參數 |
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| APT40GP60JD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):40Amps|Ultrafast IGBT Family |
| APT40GP60JDQ2 | 功能描述:IGBT 600V 86A 284W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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| APT40GP60SG | 功能描述:IGBT 600V 100A 543W D3PAK RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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