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參數資料
| 型號： | APT40GT60BR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 188K |
| 代理商： | APT40GT60BR |
Symbol
Parameter
Ratings
Unit
V
CES
Collector-Emitter Voltage
600
Volts
V
GE
Gate-Emitter Voltage
±20
I
C1
Continuous Collector Current @ T
C = 25°C
80
Amps
I
C2
Continuous Collector Current @ T
C = 105°C
40
I
CM
Pulsed Collector Current 1
160
SSOA
Switching Safe Operating Area @ T
J = 150°C
160A @ 600V
P
D
Total Power Dissipation
345
Watts
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Maximum Ratings
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
V
(BR)CES
Collector-Emitter Breakdown Voltage (V
GE = 0V, IC = 5mA)
600
-
Volts
V
GE(TH)
Gate Threshold Voltage (V
CE = VGE, IC = 500μA, Tj = 25°C)
345
V
CE(ON)
Collector Emitter On Voltage (V
GE = 15V, IC = 40A, Tj = 25°C)
1.6
2.15
2.5
Collector Emitter On Voltage (V
GE = 15V, IC = 40A, Tj = 125°C)
-
2.8
I
CES
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
--
80
μA
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
-
2000
I
GES
Gate-Emitter Leakage Current (V
GE = ±20V)
-
100
nA
Static Electrical Characteristics
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
.
Microsemi Website - http://www.microsemi.com
052-6222
Rev
C
1
1-
2008
APT40GT60BR
600V, 80A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-
ness and ultrafast switching speed.
Features
Low Forward Voltage Drop
Low Tail Current
RoHS Compliant
RBSOA and SCSOA Rated
High Frequency Switching to 150KHz
Ultra Low Leakage Current
TO
-24
7
G
C
E
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT40GT60BRG | 功能描述:IGBT 600V 80A 345W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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| APT40M35JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M35PVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M42BFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 400V V(BR)DSS | 95A I(D) |
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