- 您現在的位置：買賣IC網 > PDF目錄366568 > APT40M42JN (Advanced Power Technology Ltd.) XTAL MTL T/H HC49/US PDF資料下載
參數資料
| 型號： | APT40M42JN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | XTAL MTL T/H HC49/US |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | APT40M42JN |
APT40M42JN
400V 86A
0.042
SINGLE DIE ISOTOP
PACKAGE
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5.0mA)
THERMAL CHARACTERISTICS
Symbol
R
Θ
JC
R
Θ
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
0.18
0.05
UNIT
°
C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
MIN
TYP
MAX
APT40M42JN
400
APT40M42JN
86
APT40M42JN
0.042
250
1000
±
100
2
4
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
APT
40M42JN
400
86
344
±
30
690
5.52
-55 to 150
300
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
SOT-227
G
S
S
D
ISOTOP
"UL Recognized" File No. E145592 (S)
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
0
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| APT40M70JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M70LVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M82WVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M90JN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT40M75JN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT40M70B2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT40M70B2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT40M70JVFR | 功能描述:MOSFET N-CH 400V 53A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT40M70JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M70LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
發布緊急采購，3分鐘左右您將得到回復。