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參數資料
型號: APT5010JVRU2
廠商: MICROSEMI CORP
元件分類: JFETs
英文描述: 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, ISOTOP-4
文件頁數: 1/2頁
文件大小: 406K
代理商: APT5010JVRU2
APT5010JVRU2
A
P
T
5010J
V
R
U
2–
R
ev
1
J
une
,2006
www.microsemi.com
1 – 7
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
44
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
176
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
100
m
PD
Maximum Power Dissipation
Tc = 25°C
450
W
IAR
Avalanche current (repetitive and non repetitive)
44
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
39
A
VDSS = 500V
RDSon = 100m max @ Tj = 25°C
ID = 44A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant
ISOTOP Boost chopper
MOSFET Power Module
K
D
G
S
相關PDF資料
PDF描述
APT5010JVR 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5010JVR 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5010LFLC 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT5010LLL 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT5010LLLG 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
相關代理商/技術參數
參數描述
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APT5010LFLLG 功能描述:MOSFET N-CH 500V 46A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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APT5010LLL 制造商:APT 功能描述:
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