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參數資料
| 型號： | APT5016BFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 203K |
| 代理商： | APT5016BFLLG |
DYNAMIC CHARACTERISTICS
APT5016BFLL_SFLL
050-7026
Rev
C
6-2004
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -30A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -30A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -30A, di/dt = 100A/s)
Peak Recovery Current
(IS = -30A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
30
120
1.3
15
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.3
Tj = 125°C
4.5
Tj = 25°C
12
Tj = 125°C
18
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.89mH, RG = 25, Peak IL = 30A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID30A
di/dt ≤ 700A/s V
R ≤ 500
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 250V
I
D = 30A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 250V
I
D = 30A @ 25°C
R
G = 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 333V, VGS = 15V
I
D = 30A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 333V VGS = 15V
I
D = 30A, RG = 5
MIN
TYP
MAX
2833
600
60
72
16
42
10
27
14
256
172
476
215
UNIT
pF
nC
ns
J
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
相關PDF資料 |
PDF描述 |
|---|---|
| APT5016BFLL | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5016SFLL | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5016SFLLG | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5016BFLL | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5016SFLL | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT5016BLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT5016BLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT5016BLLG | 功能描述:MOSFET N-CH 500V 30A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT5016SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5016SFLLG | 功能描述:MOSFET N-CH 500V 30A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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