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參數資料
型號: APT5016SFLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數: 4/5頁
文件大?。?/td> 203K
代理商: APT5016SFLL
APT5016BFLL_SFLL
050-7026
Rev
C
6-2004
Typical Performance Curves
VDS=250V
VDS=100V
VDS=400V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500
0
10
20
30
40
50
0 10 20 30 40
50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
120
10
1
16
14
12
10
8
6
4
2
0
10,000
5,000
1,000
100
10
200
100
50
10
5
1
TJ=+150°C
TJ=+25°C
Coss
Ciss
Crss
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
102030
40
50
0
5
10 15 20 25 30 35 40 45 50
V
DD = 333V
I
D = 30A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
60
50
40
30
20
10
0
1000
800
600
400
200
0
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
I
D = 30
相關PDF資料
PDF描述
APT501R1BNF 9 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1004R2BNR 4 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT5085BNF 9.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT5020BNR 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5022BNR 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關代理商/技術參數
參數描述
APT5016SFLLG 功能描述:MOSFET N-CH 500V 30A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT5016SLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT5016SLLG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube
APT5017 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5017BLC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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