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參數資料
| 型號： | APT5022AVR |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | APT5022AVR |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2 (V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2 (V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
050-5803
Rev
B
9-2001
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
500
21
0.220
25
250
±100
24
APT5022AVR
500
21
84
±30
±40
235
1.88
-55 to 150
300
21
30
1300
APT5022AVR
500V
21A
0.220
W
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
100% Avalanche Tested
Lower Leakage
Popular TO-3 Package
POWER MOS V
TO-3
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
相關PDF資料 |
PDF描述 |
|---|---|
| APT5022BNF-GULLWING | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BNF-BUTT | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BNF-BUTT | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BNF-GULLWING | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BNR-BUTT | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT5022BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT5022BNF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 27A I(D) | TO-247AD |
| APT5022BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 27A I(D) | TO-247AD |
| APT5022BNG | 功能描述:MOSFET N-CH 500V 27A TO247AD 制造商:microsemi corporation 系列:POWER MOS IV? 包裝:管件 零件狀態:停產 FET 類型:N 溝道 技術:MOSFET（金屬氧化物） 漏源電壓（Vdss）:500V 電流 - 連續漏極（Id）（25°C 時）:27A（Tc） 驅動電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 1mA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:210nC @ 10V Vgs（最大值）:±30V 不同 Vds 時的輸入電容（Ciss）（最大值）:3500pF @ 25V FET 功能:- 功率耗散（最大值）:360W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:220 毫歐 @ 13.5A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 供應商器件封裝:TO-247AD 封裝/外殼:TO-247-3 標準包裝:30 |
| APT5022BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD |
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