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參數資料
| 型號： | APT50GF120B2R |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT is a new generation of high voltage power IGBTs. |
| 中文描述： | 該快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 37K |
| 代理商： | APT50GF120B2R |
TO-264
(LR)
GCE
T-Max
(B2R)
GCE
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
PRELMNARY
MIN
TYP
MAX
1200
-15
4.5
5.5
6.5
2.9
3.5
3.4
4.1
0.5
TBD
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
μ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
°
C)
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 90
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 90
°
C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT50GF120B2R/LR
1200
1200
15
±
20
80
50
160
100
85
390
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°
C
0
APT50GF120B2R
APT50GF120LR
1200V
80A
APT50GF120B2R
APT50GF120LR
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
Fast IGBT
G
C
E
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
相關PDF資料 |
PDF描述 |
|---|---|
| APT50GF120JRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF120LR | Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| APT50GF60B2RD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| APT50GF60HR | The Fast IGBT is a new generation of high voltage power IGBTs. |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50GF120B2RG | 功能描述:IGBT 1200V 135A 781W TMAX RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GF120JRD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF120JRDQ3 | 功能描述:IGBT 1200V 120A 521W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT50GF120LR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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